ROHM has released the RY7P250BM, 100V power MOSFET optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring battery protection.
As AI technology advances, data centers face increasing power demand driven by generative AI and high-performance GPUs, creating a need to improve efficiency while supporting higher currents. To address these challenges, the industry is shifting from 12V to more efficient 48V power architectures, where hot-swap circuits are used to replace modules without shutdown. These circuits require MOSFETs that provide both a wide Safe Operating Area (SOA) and low ON-resistance to protect against inrush currents and overloads.
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The RY7P250BM combines a wide SOA and low ON-resistance in a compact 8080-size package, reducing power loss, heat, and cooling requirements while enhancing server reliability and energy efficiency. As demand for 8080-size MOSFETs grows, it offers a drop-in replacement for existing designs. It achieves a wide SOA (VDS=48V, Pw=1ms/10ms), ideal for hot-swap circuits. Power loss and heat are minimized with an industry-leading low ON-resistance of 1.86 milliohms (VGS=10V, ID=50A, Tj=25 degrees C), approximately 18% lower than the typical 2.28 milliohms of comparable 100V wide SOA MOSFETs.
A wide SOA is critical for hot-swap circuits in AI servers subject to large inrush currents. The RY7P250BM meets this need with 16A at 10ms and 50A at 1ms, handling high-load conditions beyond conventional MOSFETs.
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The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low RDS(on) are highly evaluated in mission-critical cloud applications.
ROHM will continue to expand its 48V-compatible power solutions for servers and industrial equipment, supporting sustainable ICT infrastructure and energy savings through high-efficiency, high-reliability products.
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Source – PR Newswire
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